The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low– ...
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Polarity. NPN ; Power Dissipation. 65 W ; Primary Type. Si ; Product Header. NPN Darlington Silicon Transistor ; Resistance, Thermal, Junction to Ambient. 62.5 °C/W.
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Overview · NTE Electronics NTE261 NPN Silicon Complementary Darlington Transistor · Features. High DC Current Gain: hFE = 2500 Type @ IC = 4A Collector-Emitter ...
$9.99
NTE 261 T NPN Si Darlington Power Amp (ECG) (L CB) ; Brand. NTE ; MPN. 261 ; Accurate description. 4.9 ; Reasonable shipping cost. 5.0 ; Shipping speed. 5.0.
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NTE Electronics NTE261 TRANSISTOR NPN SILICON DARLINGTON 100V IC=5A TO-220 CASE ; Country/Region of Manufacture. United States ; MPN. NTE261 ; Accurate description.
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The NTE261 (NPN) complementary silicon Darlington power transistors in a TO220 type package designed for purpose amplifier and low speed switching ...
This configuration gives a much higher current gain than each transistor taken separately. Invented in 1953 by Sidney Darlington. Find Case Style.
Missing: NTE261 | Show results with:NTE261
NTE261NTE Electronics ; Kind of transistor. Darlington ; Collector-emitter voltage. 100V ; Collector current. 8A ; Power dissipation. 65W ; Case. TO220.
Missing: Silicon | Show results with:Silicon
NTE Electronics NTE261 | Transistor: NPN; bipolar; Darlington; 100V; 8A; 65W; TO220 - This product is available in Transfer Multisort Elektronik.
Missing: Silicon | Show results with:Silicon
NTE261 (NPN) & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE261 (NPN) and NTE262 (PNP) are complementary ...