Indium arsenide
Chemical compound
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Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. Wikipedia
Formula: InAs
Melting point: 1,728°F (942°C)
Density: 5.67 g/cm³
Crystal structure: Zinc blende
Molar mass: 189.74 g/mol
Band gap: 0.354 eV (300 K)
Electron mobility: 40000 cm2/(V*s)